Single Electron Transistor
SINGLE ELECTRON TRANSISTOR
SEMINAR
ABSTRACT
A single-electron transistor consists of a small conducting island connected to the source and drain leads by tunnel junctions and connected to one or more gates. The nanometre scale conductive island is embedded in an insulating material. Gate signals are capacitive coupled to the island. Two gate signals can be applied to the island out of which one is optional. Here, only one electron can tunnel from source to drain. The processes that take place in this island (nano structure) are coulomb blockade phenomenon and single electron tunnelling.
CONTENTS
CHAPTER 1: List of figures……………………………………………..6 CHAPTER 2: List of tables………………………………………………7 CHAPTER 3: Introduction……………………………………………….8 CHAPTER 4: Single-Electron Transistors…………………….…….…...9
CHAPTER 5: Equivalent Circuit for SET...……………………………..13
CHAPTER 6: SET Characteristics..………………………………...…….17
CHAPTER 7: Comparison between SET and MOSFET............................19
CHAPTER 8: Conclusions………… …..…………………………….....20 CHAPTER 9: References ……………………………………………….21
CHAPTER 1
LIST OF FIGURES
SL. no Fig no Description Page. No
1 Fig 1 EVOLUTION OF SET FROM SIMPLE TUNNEL
JUNCTION 9
2 Fig 2 CHARGE FLOW IN CONDUCTORS AND TUNNEL
JUCTION 10
3 Fig 3 CURRENT BIASED TUNNEL JUNCTION SHOWING
COULOMB OSCILLATIONS 11
4 Fig 4 EQUIVALENT CIRCUIT FOR SINGLE ELECTRON
TRANSISTOR 13
5 Fig 5 SCHEMATIC AND DEVICE PARAMETERS OF A SET 13
6 Fig 6 SET ID VS VDS CHARACTERISTICS 16
7 Fig 7 IDS VS VGS CHARACTERISTICS OF SET 17
8 Fig 8 GATE ENERGY BAND DIAGRAM 17
CHAPTER 2
LIST OF TABLES
SL. No Table. no Description Page. No
1 Table 1 COMPARISON BETWEEN SETS AND MOSFETS 19
SEMINAR
ABSTRACT
A single-electron transistor consists of a small conducting island connected to the source and drain leads by tunnel junctions and connected to one or more gates. The nanometre scale conductive island is embedded in an insulating material. Gate signals are capacitive coupled to the island. Two gate signals can be applied to the island out of which one is optional. Here, only one electron can tunnel from source to drain. The processes that take place in this island (nano structure) are coulomb blockade phenomenon and single electron tunnelling.
CONTENTS
CHAPTER 1: List of figures……………………………………………..6 CHAPTER 2: List of tables………………………………………………7 CHAPTER 3: Introduction……………………………………………….8 CHAPTER 4: Single-Electron Transistors…………………….…….…...9
CHAPTER 5: Equivalent Circuit for SET...……………………………..13
CHAPTER 6: SET Characteristics..………………………………...…….17
CHAPTER 7: Comparison between SET and MOSFET............................19
CHAPTER 8: Conclusions………… …..…………………………….....20 CHAPTER 9: References ……………………………………………….21
CHAPTER 1
LIST OF FIGURES
SL. no Fig no Description Page. No
1 Fig 1 EVOLUTION OF SET FROM SIMPLE TUNNEL
JUNCTION 9
2 Fig 2 CHARGE FLOW IN CONDUCTORS AND TUNNEL
JUCTION 10
3 Fig 3 CURRENT BIASED TUNNEL JUNCTION SHOWING
COULOMB OSCILLATIONS 11
4 Fig 4 EQUIVALENT CIRCUIT FOR SINGLE ELECTRON
TRANSISTOR 13
5 Fig 5 SCHEMATIC AND DEVICE PARAMETERS OF A SET 13
6 Fig 6 SET ID VS VDS CHARACTERISTICS 16
7 Fig 7 IDS VS VGS CHARACTERISTICS OF SET 17
8 Fig 8 GATE ENERGY BAND DIAGRAM 17
CHAPTER 2
LIST OF TABLES
SL. No Table. no Description Page. No
1 Table 1 COMPARISON BETWEEN SETS AND MOSFETS 19