Euvl
Extreme Ultraviolet Lithography
MD JAWWAD REZANOOR (113001040); AMLAN SEN(092100040); MIZANUR RAHMAN(093052040) Azimur Rahman School of Engineering, Presidency University, Dhaka
Abstract- Extreme Ultraviolet lithography (EUVL) is the leading technology, widely believed to take semiconductor lithography to the next generation. EUVL is the technology being considered for printing circuits at the 32nm node and below in a high volume manufacturing (HVM) environment fab. Compared to the traditional optical lithography technique, in EUVL a 13.5nm wavelength radiation is used. This paper discusses the techniques involved in EUVL, prospects it holds and the challenges in its implementation.
years, following the so called Moore’s law. To keep up the progression rate of shrinking size, a new technology is required for which EUVL is currently the front runner. The drastically smaller light wavelength of 13.5 nm used in EUVL as opposed to 193-248nm used in the conventional methods is the main distinguishing factor between these methods.
II.
LIMITATIONS OF OPTICAL LITHOGRAPHY
I.
INTRODUCTION
Optical projection lithography is an optical system that transfers the image from the mask to the photoresist layer coated on the silicon wafer. In optical lithography the intricate patterns of integrated circuits are scaled at a ratio of 4:1 through a mask and then carved on the wafer. Currently, the most advanced lithographic tool used in HVM employ ArF immersion lithography and double patterning with a light wavelength of 193nm to print features that have half-pitch as small as 32nm[1]. In the past 40 years, the minimum dimension of integrated circuits (ICs) has been shrinking at a rate of 30% smaller feature size every three
Fundamentally, there are no major limitations to optical lithography; however there are process, implementation and cost limits. There exists the Rayleigh limitation on the pitch, not on the critical dimensions (CDs). The following equations
MD JAWWAD REZANOOR (113001040); AMLAN SEN(092100040); MIZANUR RAHMAN(093052040) Azimur Rahman School of Engineering, Presidency University, Dhaka
Abstract- Extreme Ultraviolet lithography (EUVL) is the leading technology, widely believed to take semiconductor lithography to the next generation. EUVL is the technology being considered for printing circuits at the 32nm node and below in a high volume manufacturing (HVM) environment fab. Compared to the traditional optical lithography technique, in EUVL a 13.5nm wavelength radiation is used. This paper discusses the techniques involved in EUVL, prospects it holds and the challenges in its implementation.
years, following the so called Moore’s law. To keep up the progression rate of shrinking size, a new technology is required for which EUVL is currently the front runner. The drastically smaller light wavelength of 13.5 nm used in EUVL as opposed to 193-248nm used in the conventional methods is the main distinguishing factor between these methods.
II.
LIMITATIONS OF OPTICAL LITHOGRAPHY
I.
INTRODUCTION
Optical projection lithography is an optical system that transfers the image from the mask to the photoresist layer coated on the silicon wafer. In optical lithography the intricate patterns of integrated circuits are scaled at a ratio of 4:1 through a mask and then carved on the wafer. Currently, the most advanced lithographic tool used in HVM employ ArF immersion lithography and double patterning with a light wavelength of 193nm to print features that have half-pitch as small as 32nm[1]. In the past 40 years, the minimum dimension of integrated circuits (ICs) has been shrinking at a rate of 30% smaller feature size every three
Fundamentally, there are no major limitations to optical lithography; however there are process, implementation and cost limits. There exists the Rayleigh limitation on the pitch, not on the critical dimensions (CDs). The following equations
References: [1] Soumitra Roy, md. Shahadat hasan, Tonmoy Kumar Bhowmick, Saniul Haq, Fariah Hayee, Asif Ahmed, Samantha Lubaba noor, ”Exteme Ultraviolet Lithography: Road to 20nm and Beyond” [2] R. Fabian Pease, Stephen Y. Chou, “Lithography and Other Patterning Techniques for Future Electrnoics” [3] Stephen Y. Chou, Peter R, Krauss, Preston J. Renstrom, “Nanoimprint lithography” 1996 [4] P. Lv1, Y.L. Cheng2, C.H. Zhang1, J.M.K. MacAlpine,” Design for Pre/main Pulsed Power Generator for EUVL Source” [5] Bruno La Fontaine, Yunfei Deng, Ryoung-han Kim, Harry J. Levinson, Uzodinma Okoroanyanwu, “Extreme ultraviolet lithography: From research to manufacturing” [6] Jos Benschop, Vadim Banine, Sjoerd Lok, and Erik Loopstra, “Extreme ultraviolet lithography: Status and prospects” [7] Shao-Yun Fang1 and Yao-Wen Chang, “Simultaneous Flare Level and Flare Variation Minimization with Dummification in EUVL” [8] In Wook Cho, Hyunsu Kim, Joo-Yoo Hong and Hye-Keun Oh, “Reduction of Line Width and Edge Roughness by Using a Resist Reflow Process for Extreme Ultraviolet Lithography” [9] Masahito Niibe, Atsushi Miyafuji, Hiroo Kinoshita, Takeo Watanabe, Shozo Inoue and Keiji Koterazawa, “Fabrication of an aspherical mirror for Extreme UltraViolet Lithography (EUVL) optics” [10] M.D. Fields, S.S. Harilal and A. Hassanein, “THE ROLE OF EXCITATION WAVELENGTH ON Fig.5: Masks at nanoscales VIII. CONCLUSION EUVL has been prepared for the next generation lithography for several years. As increasing demand for power and storage drives us to pursue ever smaller features, we DEBRIS FOR CO2 AND Nd:YAG PRODUCEDPLASMA EUVL SOURCES” LASER- [11] Patrick Kearney*a, C. C. Lina" and Henry Yun a, Rajul Randiveb, Ira Reissb, Alan Hayesb, and Paul Mirkarimi, “Ion Beam Deposition for Defect-Free EUVL Mask Blanks”