Cmos and Digital Design
Physical and Materials Constants
Boltzmann 's constant Electron charge Thermal voltage
k q kT/q
1.38 x 10-23 1.6 x 10-19 0.026 (at T= 300 K) 1.12 (at T = 300 K)
J/K
C
V
Energy gap of silicon (Si)
Eg
eV
Intrinsic carrier concentration of silicon (Si)
ni
1.45 x 1010 (at T = 300 K)
cm73
Dielectric constant of vacuum Dielectric constant of silicon (Si) Dielectric constant of silicon dioxide (SiO2 )
60
8.85 x 10-14
F/cm
ESi
11.7 x O
F/cm
6.x
3.97 x EO
F/cm
Commonly Used Prefixes for Units giga mega kilo milli micro nano pico femto G M k m In n p f
109 106 103
10-3
10-6 10-9 10-12
10-15
second edition
CMO S DIGITAL INTE GRATE D CI RCUITS
Analysis and Design
SUNG-MO (STEVE) ANG
University of Illinois at Urbana- Champaign
YUSUF LEBLEBIGI
Worcester Polytechnic Institute Swiss Federal Institute of Technology-Lausanne
U
McGraw-Hill.*
Boston Burr Ridge, IL Dubuque, IA Madison, WI New York San Francisco St. Louis Bangkok Bogota Caracas Lisbon London Madrid Mexico City Milan New Delhi Seoul Singapore Sydney Taipei Toronto
Copyrighted Material
McGmlfl-Hill Higher Education
TliJRD EDITION
A Division of 'f1tt ' M:Ora•·H ill Omtpanics
sz
CMOS DIGITAL lNTEORATEO CIRCUITS: ANALYSIS ANDD€SIGN
Pi•blislled by McGr:t\\o '·HiU. a businCS. '!unil o(The McOrnw·Hill Comp:mic s. Inc.. 122 I Avenue oftheAtnericas, N ew YO• 'k, NY 10020. Copyrighl() 2003. 1999, 1996 by The McOrsw-Hill Companies, loc. All rights �!laved. No Jllll 't of lhis publkation muy be reproduooc.l or di�triboted
in My form or by any means. or stored in l.ll.iatilbi•St Of teltleval systenl. wi thout the prior wr inw
consent o(The McCr-.1w·Hill Co.npanks. Inc .. including. but oot limih!d t(), in any nctviotk or ()(her electronic SlorlgC or I.Jnnsm•ssion. ()r bl 'l);ui�M for distance lenming. Some: ;uKiUaries, inc-luding electronic and prim compoDCnts. nl:l) ' n(lt bt ;h ';lll:d)IC to eusaomcrs ouiSide the United Stutt5.
Tbi$ boot Is r-imed on acid·froc PQper. Jntcmational Po
Boltzmann 's constant Electron charge Thermal voltage
k q kT/q
1.38 x 10-23 1.6 x 10-19 0.026 (at T= 300 K) 1.12 (at T = 300 K)
J/K
C
V
Energy gap of silicon (Si)
Eg
eV
Intrinsic carrier concentration of silicon (Si)
ni
1.45 x 1010 (at T = 300 K)
cm73
Dielectric constant of vacuum Dielectric constant of silicon (Si) Dielectric constant of silicon dioxide (SiO2 )
60
8.85 x 10-14
F/cm
ESi
11.7 x O
F/cm
6.x
3.97 x EO
F/cm
Commonly Used Prefixes for Units giga mega kilo milli micro nano pico femto G M k m In n p f
109 106 103
10-3
10-6 10-9 10-12
10-15
second edition
CMO S DIGITAL INTE GRATE D CI RCUITS
Analysis and Design
SUNG-MO (STEVE) ANG
University of Illinois at Urbana- Champaign
YUSUF LEBLEBIGI
Worcester Polytechnic Institute Swiss Federal Institute of Technology-Lausanne
U
McGraw-Hill.*
Boston Burr Ridge, IL Dubuque, IA Madison, WI New York San Francisco St. Louis Bangkok Bogota Caracas Lisbon London Madrid Mexico City Milan New Delhi Seoul Singapore Sydney Taipei Toronto
Copyrighted Material
McGmlfl-Hill Higher Education
TliJRD EDITION
A Division of 'f1tt ' M:Ora•·H ill Omtpanics
sz
CMOS DIGITAL lNTEORATEO CIRCUITS: ANALYSIS ANDD€SIGN
Pi•blislled by McGr:t\\o '·HiU. a businCS. '!unil o(The McOrnw·Hill Comp:mic s. Inc.. 122 I Avenue oftheAtnericas, N ew YO• 'k, NY 10020. Copyrighl() 2003. 1999, 1996 by The McOrsw-Hill Companies, loc. All rights �!laved. No Jllll 't of lhis publkation muy be reproduooc.l or di�triboted
in My form or by any means. or stored in l.ll.iatilbi•St Of teltleval systenl. wi thout the prior wr inw
consent o(The McCr-.1w·Hill Co.npanks. Inc .. including. but oot limih!d t(), in any nctviotk or ()(her electronic SlorlgC or I.Jnnsm•ssion. ()r bl 'l);ui�M for distance lenming. Some: ;uKiUaries, inc-luding electronic and prim compoDCnts. nl:l) ' n(lt bt ;h ';lll:d)IC to eusaomcrs ouiSide the United Stutt5.
Tbi$ boot Is r-imed on acid·froc PQper. Jntcmational Po
References: 10. R.L. Wadsack, "Fault modeling and logic simulation of CMOS and MOS integrated circuits," Bell System Technical Journal, vol. 57, no. 5, pp. 1449-1474, May-June 1978.