Student
SiGe BiCMOS Technology for Communication Products
Marco Racanelli and Paul Kempf
Jazz Semiconductor
4321 Jamboree Rd, Newport Beach, CA 92660
Email: marco.racanelli@jazzsemi.com
Abstract
SiGe BiCMOS technology is reviewed with focus on recent advances including the achievement of >200 GHz Ft and
Fmax SiGe transistors, integration with generic 0.13 µm
CMOS, and the realization of low-cost nodes for the integration of wireless transceivers.
Record-breaking
wireless and wire-line circuit examples are also provided.
Introduction
SiGe BiCMOS is becoming the technology of choice for achieving cost-effective integration in wireless and wireline communication transceivers.
Several SiGe BiCMOS technology nodes exist today at commercial foundries ranging in complexity and performance from 0.35 to 0.18 µm geometry and from 60 to 200 GHz Ft (Figure 1).
substrate capacitance by nearly a factor of 4 for a minimum size NPN but can be removed to reduce wafer cost without impacting other device parameters.
Base
Emitter
Collector
Buried
Layer
Extrinsic
Base
Intrinsic
SiGe Base
Link Base
Deep
Deep Trench
SiGe200
200
Ft (GHz)
SiGe120
100
80
60
40
20
10G
SiGe90
SiGe60
SiGe BiCMOS
40G
Si BiCMOS
Si CMOS
WLAN
After formation of the CMOS wells, gate, and collector sinker, a SiGe layer is deposited by use of a single wafer RTCVD reactor.
CDMA
GSM
0.5
Figure 2: Self-aligned SiGe NPN transistor with deep trench. Self-aligned transistors have intrinsic and extrinsic base formed by a single patterning step leading to a narrow and well controlled link base and low base resistance. .35
.25
.18 .15 .13 .1
Technology (µm)
Figure 1. SiGe BiCMOS nodes mapped across major end markets. Plotted as examples are Jazz’s SiGe60, SiGe90, SiGe120 and SiGe200 technologies.
In this paper, we will review advances in the performance of
SiGe bipolar devices, the integration of these devices with
Marco Racanelli and Paul Kempf
Jazz Semiconductor
4321 Jamboree Rd, Newport Beach, CA 92660
Email: marco.racanelli@jazzsemi.com
Abstract
SiGe BiCMOS technology is reviewed with focus on recent advances including the achievement of >200 GHz Ft and
Fmax SiGe transistors, integration with generic 0.13 µm
CMOS, and the realization of low-cost nodes for the integration of wireless transceivers.
Record-breaking
wireless and wire-line circuit examples are also provided.
Introduction
SiGe BiCMOS is becoming the technology of choice for achieving cost-effective integration in wireless and wireline communication transceivers.
Several SiGe BiCMOS technology nodes exist today at commercial foundries ranging in complexity and performance from 0.35 to 0.18 µm geometry and from 60 to 200 GHz Ft (Figure 1).
substrate capacitance by nearly a factor of 4 for a minimum size NPN but can be removed to reduce wafer cost without impacting other device parameters.
Base
Emitter
Collector
Buried
Layer
Extrinsic
Base
Intrinsic
SiGe Base
Link Base
Deep
Deep Trench
SiGe200
200
Ft (GHz)
SiGe120
100
80
60
40
20
10G
SiGe90
SiGe60
SiGe BiCMOS
40G
Si BiCMOS
Si CMOS
WLAN
After formation of the CMOS wells, gate, and collector sinker, a SiGe layer is deposited by use of a single wafer RTCVD reactor.
CDMA
GSM
0.5
Figure 2: Self-aligned SiGe NPN transistor with deep trench. Self-aligned transistors have intrinsic and extrinsic base formed by a single patterning step leading to a narrow and well controlled link base and low base resistance. .35
.25
.18 .15 .13 .1
Technology (µm)
Figure 1. SiGe BiCMOS nodes mapped across major end markets. Plotted as examples are Jazz’s SiGe60, SiGe90, SiGe120 and SiGe200 technologies.
In this paper, we will review advances in the performance of
SiGe bipolar devices, the integration of these devices with
References: Dec. 1999. (4) Pingxi Ma, 2003 RFIC Symposium, in press.